IRFS230

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6.2A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IRFU230A

AdvancedPowerMOSFET

FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:10A(Max.)@VDS=200V LowRDS(ON):0.333(Typ.) W m

IRFU230A

iscN-ChannelMOSFETTransistor

IRFU230B

200VN-ChannelMOSFET

TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulsein

IRFY230

N-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

IRFY230C

N-ChannelMOSFETinaHermeticallysealed

IRK.230

SCR/SCRandSCR/DIODE

IRLF230

HEXFETTRANSISTOR

IRLR/U230A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.4Ω ID=7.5A FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=200V ♦LowerRDS(ON):0.335Ω(Typ.)

IRLR230A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.4Ω ID=7.5A FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=200V ♦LowerRDS(ON):0.335Ω(Typ.)