IRF5305

Advanced Process Technology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF5305

-55V P-Channel MOSFET

Features VDS(V)=-55V ID=-31A(VGS=-10V) RDS(ON)

IRF5305

Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,pr

IRF5305

P-Channel MOSFET Transistor

IRF5305

-55V 单个 P 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装; \n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n• P 通道MOSFET\n;

IRF5305L

Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedand ruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF5305L

Advanced Process Technology

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthe highestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinte

IRF5305LPBF

HEXFET Power MOSFET

IRF5305LPBF

Advanced Process Technology

IRF5305PBF

丝印：IRF5305；Package：TO-220；-60V P-Channel MOSFET

Features *VDS(V)=-60V *ID=-31A(VGS=-10V) *RDS(ON)