IRF5305中文资料IRF数据手册PDF规格书
IRF5305规格书详情
描述 Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
产品属性
- 型号:
IRF5305
- 功能描述:
MOSFET MOSFET, P-CHANNEL, -55V, -31A, 60 mOhm, 42 nC Qg, TO-220AB
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VISHAY |
24+ |
TO-263 |
12000 |
VISHAY专营进口原装现货假一赔十 |
询价 | ||
IR |
24+ |
TO 220 |
161481 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
18+ |
TO220 |
12500 |
全新原装正品,本司专业配单,大单小单都配 |
询价 | ||
IR |
23+ |
TO-220 |
9896 |
询价 | |||
INFINEON/英飞凌 |
21+ |
30000 |
百域芯优势 实单必成 可开13点增值税 |
询价 | |||
IR |
23+ |
TO-263 |
30000 |
代理全新原装现货,价格优势 |
询价 | ||
NA |
23+ |
NA |
26094 |
10年以上分销经验原装进口正品,做服务型企业 |
询价 | ||
IR |
25+23+ |
TO-263 |
44607 |
绝对原装正品全新进口深圳现货 |
询价 | ||
IR |
24+ |
NA/ |
4250 |
原装现货,当天可交货,原型号开票 |
询价 | ||
IR |
2223+ |
TO-220 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
询价 |