2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET

Description This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. This power MOSFET is designed for applications such

文件：45.1 Kbytes 页数：7 Pages

INTERSIL

Ease of Paralleling

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件：282.55 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

文件：158.54 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.7A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：296.14 Kbytes 页数：2 Pages

ISC

无锡固电

2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET

Renesas

瑞萨

Power MOSFET

Vishay

威世

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

文件：158.54 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Mosfet Transistor

• DESCRITION • Designed for high speed applications, such as switching power supplies , AC and DC motor controls,relay and solenoid drivers and other pulse. • FEATURES • Low RDS(on) • VGS Rated at ±30V • Silicon Gate for Fast Switching Speed • Rugged • Low Drive Requirements

文件：200.66 Kbytes 页数：2 Pages

ISC

无锡固电

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：855.44 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

hexfet power mosfet

HEXFET Power MOSFET • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Surface Mount • Ease of Paralleling • Simple Drive Requirements • Lead-Free

文件：924.75 Kbytes 页数：7 Pages

IRF