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IRF614

2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET

Description ThisisanN-Channelenhancementmodesilicongatepowerfieldeffecttransistor.ItisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.ThispowerMOSFETisdesignedforapplicationssuch

Intersil

Intersil Corporation

IRF614

Ease of Paralleling

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半导体

IRF614

Power MOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技威世科技半导体

IRF614

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=2.7A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF614_V01

Power MOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技威世科技半导体

IRF614A

N-Channel Mosfet Transistor

•DESCRITION •Designedforhighspeedapplications,suchasswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulse. •FEATURES •LowRDS(on) •VGSRatedat±30V •SiliconGateforFastSwitchingSpeed •Rugged •LowDriveRequirements

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF614B

250V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF614PBF

hexfet power mosfet

HEXFETPowerMOSFET •DynamicdV/dtRating •RepetitiveAvalancheRated •FastSwitching •SurfaceMount •EaseofParalleling •SimpleDriveRequirements •Lead-Free

IRF

International Rectifier

IRF614S

Power MOSFET

FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半导体

IRF614S_V01

Power MOSFET

FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    IRF614

  • 功能描述:

    MOSFET N-Chan 250V 2.7 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
仙童
06+
TO-220
5000
原装
询价
IR
2016+
TO220
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
IR
23+
TO-220AB
8600
全新原装现货
询价
IR
24+
原厂封装
1450
原装现货假一罚十
询价
IR
15+
TO-220
11560
全新原装,现货库存,长期供应
询价
IR
24+/25+
445
原装正品现货库存价优
询价
IR
23+
TO
5000
原装正品,假一罚十
询价
IR
23+
TO-220
35890
询价
IOR
16+
TO-220
10000
全新原装现货
询价
IR
23+
TO-220
9888
专做原装正品,假一罚百!
询价
更多IRF614供应商 更新时间2025-7-18 10:31:00