N-Channel Power MOSFETs, 12A, 150-200 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V

文件：177.14 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.

文件：97.84 Kbytes 页数：9 Pages

PHI

飞利浦

9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

文件：62.35 Kbytes 页数：7 Pages

Intersil

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件：579.72 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

文件：159.6 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost. The TO-220 and package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies ,DC-AC convert

文件：94.84 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

FEATURE N channel in a plastic TO220 package. They are intended for use in high speed switching, uninterruptible power supply, motor control, audio amplifiers, industrial actuators. DC-DC & DC-AC converters for telecom, industrial and consumer environment. Complianc

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COMSET

TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET

Description Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements

文件：206.32 Kbytes 页数：2 Pages

DCCOM

道全

Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)

Description Third Generation HEXFETs MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Parall

文件：176.29 Kbytes 页数：6 Pages

IRF

N-channel mosfet transistor

Features • With TO-220 package • Low on-state and thermal resistance • Fast switching • VDSS=200V; RDS(ON)≤0.4Ω ;ID=9A • 1.gate 2.drain 3.source

文件：128.35 Kbytes 页数：1 Pages

ISC

无锡固电