Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ■ Low RDS(ON) : 0.333 Ω (Typ.)

文件：257.76 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

DESCRIPTION • Drain Current –ID=9A@ TC=25℃ • Drain Source Voltage- : VDSS= 200V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.4Ω (Max) • Fast Switching Speed • Low Drive Requirement APPLICATIONS • This device is n-channel, enhancement mode, power MOSFET designed especia

文件：262.34 Kbytes 页数：2 Pages

ISC

无锡固电

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：859.81 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·Fast Switching Speed ·Low Drive Requirement ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This

文件：320 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

DESCRIPTION • Drain Current –ID= 9A@ TC=25℃ • Drain Source Voltage- : VDSS= 200V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.4Ω (Max) • Fast Switching Speed APPLICATIONS • Desinged for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC conver

文件：72.51 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Kersemi proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high e

文件：1.50408 Mbytes 页数：9 Pages

KERSEMI

N-channel mosfet transistor

♦ Features · With TO-220F package · Low on-stateand thermal resistance · Fast switching · VDSS=200V; RDS(ON)≤0.4Ω;ID=9A · 1.gate 2.drain 3.source

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ISC

无锡固电

isc N-Channel MOSFET Transistor

• DESCRITION • Designed for high speed applications, such as switching power supplies , AC and DC motor controls ,relay and solenoid drivers and other pulse. • FEATURES • RDS(on) =0.4Ω • 6A and 200V • single pulse avalanche energy rated • SOA is Power- Dissipation Limited • Linear Transfer

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ISC

无锡固电

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.25 Ω ■ AVALANCE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100 °C ■ APPLICATION ORIENTED CHARACHTERIZATION APPLICATIONS ■ HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UPS) ■ MOTOR CO

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STMICROELECTRONICS

意法半导体

N - CHANNEL 200V - 0.35ihm - 9A - TO-220/FP MESH OVERLAY] MOSFET

Description This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. General features ■ Extremely high dv/dt capability ■ Very low intrinsic

文件：104.75 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体