Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ■ Low RDS(ON) : 0.333 Ω (Typ.)

文件：257.76 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

DESCRIPTION • Drain Current –ID=9A@ TC=25℃ • Drain Source Voltage- : VDSS= 200V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.4Ω (Max) • Fast Switching Speed • Low Drive Requirement APPLICATIONS • This device is n-channel, enhancement mode, power MOSFET designed especia

文件：262.34 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

FEATURES\n■ Avalanche Rugged Technology\n■ Rugged Gate Oxide Technology\n■ Lower Input Capacitance\n■ Improved Gate Charge\n■ Extended Safe Operating Area\n■ Lower Leakage Current : 10 μA (Max.) @ VDS = 200V\n■ Low RDS(ON) : 0.333 Ω (Typ.) ■ Avalanche Rugged Technology\n■ Rugged Gate Oxide Technology\n■ Lower Input Capacitance\n■ Improved Gate Charge\n■ Extended Safe Operating Area\n■ Lower Leakage Current : 10 μA (Max.) @ VDS = 200V\n■ Low RDS(ON) : 0.333 Ω (Typ.);

ONSEMI

安森美半导体

Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220

NJS

TO-220 MOS FETs 场效应管

GSME

桂微