N - CHANNEL 200V - 0.35ihm - 9A - TO-220/FP MESH OVERLAY] MOSFET

Description This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. General features ■ Extremely high dv/dt capability ■ Very low intrinsic

文件：104.75 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-channel 200V - 0.35廓 - 9A TO-220/TO-220FP Mesh overlay??II Power MOSFET

文件：336.19 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET

Description This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. Isolated TO-220 option simplifies assembly and cuts risk of accidental sh

文件：343.5 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-channel 200V - 0.35廓 - 9A - TO-220 /TO-220FP Mesh Overlay??Power MOSFET

文件：326.69 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET

Description This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. Isolated TO-220 option simplifies assembly and cuts risk of accidental sh

文件：343.5 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体