N-Channel Power MOSFETs 200V, 18A, 0.15ohm

Features • Ultra Low On-Resistance - rDS(ON) = 0.102Ω (Typ), VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rateing Curve

文件：160.31 Kbytes 页数：11 Pages

Fairchild

仙童半导体

Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

文件：155.4 Kbytes 页数：11 Pages

IRF

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-262 packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching applic

文件：288.63 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Process Technology

Description The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surfac

文件：1.19709 Mbytes 页数：11 Pages

KERSEMI

Advanced Process Technology

文件：248.99 Kbytes 页数：12 Pages

IRF

HEXFET Power MOSFET

文件：240.04 Kbytes 页数：11 Pages

IRF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

文件：300.8 Kbytes 页数：12 Pages

IRF

Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

文件：8.24278 Mbytes 页数：11 Pages

KERSEMI

Advanced Process Technology

文件：341.59 Kbytes 页数：11 Pages

IRF

Advanced Process Technology

文件：341.59 Kbytes 页数：11 Pages

IRF