首页>IRF640NLPBF>规格书详情
IRF640NLPBF中文资料KERSEMI数据手册PDF规格书
IRF640NLPBF规格书详情
描述 Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Ease of Paralleling
● Simple Drive Requirements
● Lead-Free
产品属性
- 型号：
IRF640NLPBF
- 功能描述：
MOSFET MOSFT 200V 18A 150mOhm 44.7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
3750 |
原装现货,当天可交货,原型号开票 |
询价 | ||
IR |
25+ |
TO-220 |
54815 |
百分百原装现货,实单必成,欢迎询价 |
询价 | ||
Infineon(英飞凌) |
23+ |
TO-262 |
19850 |
原装正品,假一赔十 |
询价 | ||
Infineon/英飞凌 |
24+ |
TO262 |
25000 |
原装正品,假一赔十! |
询价 | ||
IR |
2018+ |
TO-262 |
26976 |
代理原装现货/特价热卖! |
询价 | ||
Infineon/英飞凌 |
21+ |
TO262 |
6820 |
只做原装,质量保证 |
询价 | ||
IR |
24+ |
TO-262-3 |
271 |
询价 | |||
Infineon/英飞凌 |
23+ |
TO262 |
12700 |
买原装认准中赛美 |
询价 | ||
Infineon(英飞凌) |
24+ |
TO-262 |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
INFINEON/英飞凌 |
2418+ |
N/A |
23566 |
原装优势现货!一片起卖!可开专票! |
询价 |
