IRF640NLPBF技术资料参数原装现货IRFIRF-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRF640NLPBF	文件：300.8 Kbytes Page：12 Pages	HEXFET짰 Power MOSFET Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know 文件：300.8 Kbytes 页数：12 Pages	IRF	IRF
IRF640NLPBF	文件：8.24278 Mbytes Page：11 Pages	Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know 文件：8.24278 Mbytes 页数：11 Pages	KERSEMI	KERSEMI
IRF640NLPBF	文件：341.59 Kbytes Page：11 Pages	Advanced Process Technology 文件：341.59 Kbytes 页数：11 Pages	IRF	IRF
IRF640NLPBF	文件：341.59 Kbytes Page：11 Pages	Advanced Process Technology 文件：341.59 Kbytes 页数：11 Pages	IRF	IRF

更多IRF640NLPBF供应商更新时间2025-10-4 16:36:00