HEXFET Power MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast swtiching, ruggedized device design, low on-resistance and cost-effectivieness. ● Surface Mount ● Available in Tape & Reel ● Dynamic dv/dt Rating ● Repetitive Avalanche

文件：3.37253 Mbytes 页数：8 Pages

IRF

Power MOSFET

文件：249.24 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：249.24 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：249.24 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：685.47 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体