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IRF710

2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRF710

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半导体

IRF710

N-Channel Power MOSFETs, 2.25A, 350-400V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. •LowRDS(on) •VGSRatedat±20V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF710

N-Channel Power MOSFETs, 2.25 A, 350-400 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. •LowRDS(on) •VGSRatedat±20V

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF710

IRF710-713 MTP2N35/2N40 N-Channel Power MOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. •LowRDS(on) •VGSRatedat±20V

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF710

N-Channel Mosfet Transistor

·DESCRITION ·Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ·FEATURES ·LowRDS(on) ·VGSRatedat±20V ·SiliconGateforFastSwitchingSpeed ·Rugged ·LowDrive

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF710

N-Channel Power MOSFETs

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF710

Power MOSFET FEATURES

VishayVishay Siliconix

威世科技威世科技半导体

IRF710

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRF7101

HEXFET Power MOSFET

Benefits ●VeryLowRDS(on)at4.5VVGS ●Ultra-LowGateImpedance ●FullyCharacterizedAvalancheVoltageandCurrent ●20VVGSMax.GateRating ●100testedforRg Applications ●SynchronousMOSFETforNotebookProcessorPower ●SynchronousRectifierMOSFETforIsolatedDC-DCConverters

IRF

International Rectifier

详细参数

  • 型号:

    IRF710

  • 功能描述:

    MOSFET N-Chan 400V 2.0 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
2015+
TO-220
19889
一级代理原装现货,特价热卖!
询价
IR
24+/25+
26
原装正品现货库存价优
询价
IR
23+
TO-220
19526
询价
IR
2020+
TO-220
22
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IR
06+
TO-220
8000
原装库存
询价
IR
15+
TO-220
11560
全新原装,现货库存,长期供应
询价
SEC
23+
34-PCM
5000
原装正品,假一罚十
询价
VISHAY/IR
24+
原厂封装
550
原装现货假一罚十
询价
IOR
23+
TO-
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
IR
24+
原装
6980
原装现货,可开13%税票
询价
更多IRF710供应商 更新时间2025-7-23 17:50:00