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IRF710

N-Channel Power MOSFETs, 2.25A, 350-400V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits. • Low RDS(on) • VGS Rated at ±20 V

文件:147.35 Kbytes 页数:5 Pages

Fairchild

仙童半导体

IRF710

2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

文件:56.15 Kbytes 页数:7 Pages

Intersil

IRF710

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa

文件:1.01954 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世

IRF710

N-Channel Mosfet Transistor

·DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive

文件:203.87 Kbytes 页数:2 Pages

ISC

无锡固电

IRF710

N-Channel Power MOSFETs, 2.25 A, 350-400 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits. • Low RDS(on) • VGS Rated at ±20 V

文件:791.66 Kbytes 页数:3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF710

IRF710-713 MTP2N35/2N40 N-Channel Power MOSFETs

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits. • Low RDS(on) • VGS Rated at ±20 V

文件:791.66 Kbytes 页数:3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF710

N-Channel Power MOSFETs

文件:360.17 Kbytes 页数:5 Pages

ARTSCHIP

IRF710

Power MOSFET

文件:284.58 Kbytes 页数:9 Pages

VishayVishay Siliconix

威世

IRF710

Power MOSFET FEATURES

文件:159.88 Kbytes 页数:8 Pages

VishayVishay Siliconix

威世

IRF7103TR

丝印:IRF7103;Package:SOP-8;Dual N-Channel MOSFET

Features * VDs (v= 50V * RDpsON)

文件:420.2 Kbytes 页数:9 Pages

UMW

友台半导体

技术参数

  • Minimum Operating Temperature:

    -55°C

  • Maximum Power Dissipation:

    36000mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Gate Source Voltage:

    ±20V

  • Maximum Drain Source Voltage:

    400V

  • Maximum Continuous Drain Current:

    2A

  • Material:

    Si

  • Configuration:

    Single

  • Channel Type:

    N

  • Channel Mode:

    Enhancement

  • Category:

    Power MOSFET

供应商型号品牌批号封装库存备注价格
IR
2015+
TO-220
19889
一级代理原装现货,特价热卖!
询价
IR
25+
PLCC
18000
原厂直接发货进口原装
询价
IR
24+/25+
26
原装正品现货库存价优
询价
IR
25+
TO-220
22
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IR
06+
TO-220
8000
原装库存
询价
IR
15+
TO-220
11560
全新原装,现货库存,长期供应
询价
SEC
23+
34-PCM
5000
原装正品,假一罚十
询价
VISHAY/IR
24+
原厂封装
550
原装现货假一罚十
询价
IR
24+
原装
6980
原装现货,可开13%税票
询价
IR
16+
TO-220
10000
全新原装现货
询价
更多IRF710供应商 更新时间2025-10-13 16:03:00