型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
IRF710 | N-Channel Power MOSFETs, 2.25A, 350-400V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits. • Low RDS(on) • VGS Rated at ±20 V 文件:147.35 Kbytes 页数:5 Pages | Fairchild 仙童半导体 | Fairchild | |
IRF710 | 2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching 文件:56.15 Kbytes 页数:7 Pages | Intersil | Intersil | |
IRF710 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa 文件:1.01954 Mbytes 页数:8 Pages | VishayVishay Siliconix 威世 | Vishay | |
IRF710 | N-Channel Mosfet Transistor ·DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive 文件:203.87 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | |
IRF710 | N-Channel Power MOSFETs, 2.25 A, 350-400 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits. • Low RDS(on) • VGS Rated at ±20 V 文件:791.66 Kbytes 页数:3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
IRF710 | IRF710-713 MTP2N35/2N40 N-Channel Power MOSFETs Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits. • Low RDS(on) • VGS Rated at ±20 V 文件:791.66 Kbytes 页数:3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
IRF710 | N-Channel Power MOSFETs 文件:360.17 Kbytes 页数:5 Pages | ARTSCHIP | ARTSCHIP | |
IRF710 | Power MOSFET 文件:284.58 Kbytes 页数:9 Pages | VishayVishay Siliconix 威世 | Vishay | |
IRF710 | Power MOSFET FEATURES 文件:159.88 Kbytes 页数:8 Pages | VishayVishay Siliconix 威世 | Vishay | |
丝印:IRF7103;Package:SOP-8;Dual N-Channel MOSFET Features * VDs (v= 50V * RDpsON) 文件:420.2 Kbytes 页数:9 Pages | UMW 友台半导体 | UMW |
技术参数
- Minimum Operating Temperature:
-55°C
- Maximum Power Dissipation:
36000mW
- Maximum Operating Temperature:
150°C
- Maximum Gate Source Voltage:
±20V
- Maximum Drain Source Voltage:
400V
- Maximum Continuous Drain Current:
2A
- Material:
Si
- Configuration:
Single
- Channel Type:
N
- Channel Mode:
Enhancement
- Category:
Power MOSFET
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
2015+ |
TO-220 |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
IR |
25+ |
PLCC |
18000 |
原厂直接发货进口原装 |
询价 | ||
IR |
24+/25+ |
26 |
原装正品现货库存价优 |
询价 | |||
IR |
25+ |
TO-220 |
22 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
IR |
06+ |
TO-220 |
8000 |
原装库存 |
询价 | ||
IR |
15+ |
TO-220 |
11560 |
全新原装,现货库存,长期供应 |
询价 | ||
SEC |
23+ |
34-PCM |
5000 |
原装正品,假一罚十 |
询价 | ||
VISHAY/IR |
24+ |
原厂封装 |
550 |
原装现货假一罚十 |
询价 | ||
IR |
24+ |
原装 |
6980 |
原装现货,可开13%税票 |
询价 | ||
IR |
16+ |
TO-220 |
10000 |
全新原装现货 |
询价 |
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