丝印：IRF7103；Package：SOP-8；Dual N-Channel MOSFET

Features * VDs (v= 50V * RDpsON)

文件：420.2 Kbytes 页数：9 Pages

UMW

友台半导体

adavanced process technology

Description The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The

文件：309.95 Kbytes 页数：10 Pages

IRF

丝印：IRF7104；Package：SOP-8；-30V Dual P-Channel MOSFET

Benefits • VDS (V)= -30V • ID = -2.3A • RDS(ON)

文件：682.91 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

HEXFET Power MOSFET

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：158.94 Kbytes 页数：9 Pages

IRF

HEXFET Power MOSFET

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：215.54 Kbytes 页数：9 Pages

IRF

Advanced Process Technology

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：221.12 Kbytes 页数：9 Pages

IRF

Dual N P Channel MOSFET

Features N-Ch: VDS (V)=25V RDS(ON)

文件：452.89 Kbytes 页数：9 Pages

EVVOSEMI

翊欧

EVALUATION KIT

INTRODUCING LX1710/1711 AUDIOMAX Thank you for your interest in the latest generation of AudioMAX products. The enclosed LXE1710 evaluation board is a fully functional mono amplifier designed to demonstrate the “new and improved” Switching Class-D Power Amplifier IC from Linfinity Microsemi. The

文件：339.7 Kbytes 页数：18 Pages

MICROSEMI

美高森美

HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：271.1 Kbytes 页数：10 Pages

IRF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：302.21 Kbytes 页数：10 Pages

IRF