丝印：IRF7104；Package：SOP-8；-30V Dual P-Channel MOSFET

Benefits • VDS (V)= -30V • ID = -2.3A • RDS(ON)

文件：682.91 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

丝印：IRF7104；Package：SOP-8；-30V Dual P-Channel MOSFET

Benefits • VDS (V)= -30V • ID = -2.3A • RDS(ON)

文件：682.91 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

HEXFET Power MOSFET

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：158.94 Kbytes 页数：9 Pages

IRF

HEXFET Power MOSFET

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：215.54 Kbytes 页数：9 Pages

IRF

Advanced Process Technology

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：221.12 Kbytes 页数：9 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：221.12 Kbytes 页数：9 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：221.12 Kbytes 页数：9 Pages

IRF