丝印：IRF7509；Package：SOP-8；30V NP-Channel Enhancement Mode MOSFET

Description The IRF7509 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =6 A RDS(ON)

文件：1.96618 Mbytes 页数：8 Pages

EVVOSEMI

翊欧

丝印：IRF7509；Package：SOP-8；30V NP-Channel Enhancement Mode MOSFET

Description The IRF7509 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =6 A RDS(ON)

文件：1.96618 Mbytes 页数：8 Pages

EVVOSEMI

翊欧

Power MOSFET(Vdss=-30V)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：217.17 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=-30V)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：217.17 Kbytes 页数：8 Pages

IRF

Generation V Technology

文件：247.27 Kbytes 页数：8 Pages

Infineon

英飞凌

HEXFET짰Power MOSFET

文件：241.74 Kbytes 页数：8 Pages

IRF

Ultra Low On-Resistance

文件：247.27 Kbytes 页数：8 Pages

IRF

Generation V Technology

文件：247.27 Kbytes 页数：8 Pages

IRF

Ultra Low On-Resistance

文件：247.27 Kbytes 页数：8 Pages

IRF

Industry-standard pinout Micro-8 Package

文件：243.22 Kbytes 页数：8 Pages

IRF