型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
IRF8313 | 丝印:IRF8313;Package:SOP-8;30V 2N-Channel Enhancement Mode MOSFET General Description The is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability ap 文件:2.08671 Mbytes 页数:6 Pages | UMW 友台半导体 | UMW | |
IRF8313 | 丝印:IRF8313;Package:SOP-8;30V 2N-Channel Enhancement Mode MOSFET General Description The is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability ap 文件:2.16288 Mbytes 页数:6 Pages | EVVOSEMI 翊欧 | EVVOSEMI | |
丝印:IRF8313;Package:SOP-8;30V 2N-Channel Enhancement Mode MOSFET General Description The is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability ap 文件:2.08671 Mbytes 页数:6 Pages | UMW 友台半导体 | UMW | ||
IRF8313 | 丝印:IRF8313;Package:SOP-8;30V 2N-Channel Enhancement Mode MOSFET General Description The is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability ap 文件:2.08671 Mbytes 页数:6 Pages | UMW 友台半导体 | UMW | |
IRF8313 | 丝印:IRF8313;Package:SOP-8;30V 2N-Channel Enhancement Mode MOSFET General Description The is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability ap 文件:2.16288 Mbytes 页数:6 Pages | EVVOSEMI 翊欧 | EVVOSEMI | |
丝印:IRF8313;Package:SOP-8;30V 2N-Channel Enhancement Mode MOSFET General Description The is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability ap 文件:2.08671 Mbytes 页数:6 Pages | UMW 友台半导体 | UMW | ||
HEXFET Power MOSFET Description The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switc 文件:260.41 Kbytes 页数:10 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switc 文件:260.41 Kbytes 页数:10 Pages | IRF | IRF | ||
Fully Characterized Avalanche Voltage and Current 文件:260.41 Kbytes 页数:10 Pages | IRF | IRF | ||
Fully Characterized Avalanche Voltage and Current 文件:260.41 Kbytes 页数:10 Pages | IRF | IRF |
详细参数
- 型号:
IRF8313
- 功能描述:
MOSFET MOSFT DUAL NCh 30V 9.7A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
22+ |
TO-220 |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
SO-8 |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
友台 |
23+ |
SOP-8 |
10700 |
优势原装现货假一赔十 |
询价 | ||
IR |
23+ |
TO-220 |
8000 |
只做原装现货 |
询价 | ||
IR |
23+ |
TO-220 |
7000 |
询价 | |||
UMW |
24+ |
con |
3000 |
优势库存,原装正品 |
询价 | ||
CJ/长电 |
24+ |
SOP-8 |
8000 |
只做原装,欢迎询价,量大价优 |
询价 | ||
友台UMW |
25+ |
DIP |
3000 |
国产替换现货降本 |
询价 | ||
IR |
2016+ |
SOP8 |
6600 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
IOR |
25+ |
SOP8 |
17966 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 |
相关芯片丝印
更多- IRF8707TR
- IRF9310
- IRF9310TR
- IRF9317
- IRF9328
- IRF9388
- IRF9389
- IRF9389
- IRFB4310Z
- IRFL4105
- IRFPW4468PBF
- IRFR5305TR
- IRFR5505TR
- IRFR9024NTR
- IRFR9120NTR
- IRL60SC216
- IRLR3410
- IRLR8726TR
- AAT3123ITP-20-T1
- ISL94216AIRZ-T
- TLV803ED17DPWR
- SMAJ17A
- TLV803ED17DPWR
- TLV803ED17DPWR
- SMAJ18
- SC18IS602BIPW/S8
- SC16IS741AIPW
- ISO7420D.A
- ISO7420DR
- ISO7420DR.B
- ISO7421D.A
- ISO7421DR
- ISO7421DR.B
- ISO7421DRG4.B
- IS82C52
- ISA04N60A
- ISJ4N65
- ISJ4N65
- ISJ4N65
- ISL12020MIRZ
- ISL12022MAIBZ-T
- ISL12022MIBZ
- ISL12022MIBZ-TR5421
- ISL1801IVZ
- ISL2101015EV1Z
相关库存
更多- IRF8736
- IRF9310TR
- IRF9317TR
- IRF9317
- IRF9328TR
- IRF9388TR
- IRF9389TR
- IRF9956TR
- IRFH9310
- IRFL9014TR
- IRFR024
- IRFR5305TR
- IRFR5505TR
- IRFR9024NTR
- IRFR9120N
- IRLL110TR
- IRLR8726TR
- SMAJ17A-Q
- KTZ8812EUO-TR
- SMA9.0A
- 1SMA6.5
- TLV803ED17DPWR
- TLV803ED17DPWR
- TLV803ED17DPWR
- P4SMAJ18
- SC18IS602BIPWSLASHS8
- ISO7420D
- ISO7420D.B
- ISO7420DR.A
- ISO7421D
- ISO7421D.B
- ISO7421DR.A
- ISO7421DRG4.A
- IS82C50A-5Z
- IS82C52Z
- ISA07N65A
- ISJ4N65
- ISJ4N65
- ISJ4N65
- ISL12022MAIBZ
- ISL12022MIBZ
- ISL12022MIBZ-T
- ISL12022MIBZR5421
- ISL1902FAZ
- ISL2101010EV1Z