丝印：IRLR3410；Package：TO-252；N-Channel MOSFET

文件：261.839 Kbytes 页数：7 Pages

KEXIN

科信电子

丝印：IRLR3410；Package：TO-252；N-Channel MOSFET

文件：261.839 Kbytes 页数：7 Pages

KEXIN

科信电子

MOSFET

Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 100V ID = 17A (VGS = 10V) RDS(ON) =105mW (VGS = 10V)

文件：388.28 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 100V ID = 17A (VGS = 10V) RDS(ON) =105mW (VGS = 10V)

文件：468.78 Kbytes 页数：7 Pages

UMW

友台半导体

MOSFET

Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 100V ID = 17A (VGS = 10V) RDS(ON) =105mW (VGS = 10V)

文件：388.28 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

HEXFET Power MOSFET

文件：158.62 Kbytes 页数：10 Pages

IRF

N-Channel MOSFET Transistor

文件：335.18 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET짰 Power MOSFET

文件：290.17 Kbytes 页数：11 Pages

IRF

Logic Level Gate Drive

文件：291.13 Kbytes 页数：11 Pages

IRF

Logic Level Gate Drive

文件：291.13 Kbytes 页数：11 Pages

IRF