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IRF8707TR

丝印:IRF8707;Package:SOP-8;30V N-Channel MOSFET

Description The UMW IRF8707TR has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power t

文件:498.04 Kbytes 页数:8 Pages

UMW

友台半导体

IRF8707TR

丝印:IRF8707;Package:SOP-8;30V N-Channel MOSFET

Description The UMW IRF8707TR has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power t

文件:498.04 Kbytes 页数:8 Pages

UMW

友台半导体

IRF8707PBF

丝印:F8707;Package:SO-8;HEXFET Power MOSFET

Description The IRF8707PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8707PbF has been optimized for parameters that are critical in synchronous buck operationincluding Rds(on) and gate charge to reduce both conduction and swit

文件:248.94 Kbytes 页数:9 Pages

IRF

IRF8707PBF

丝印:F8707;Package:SO-8;Fully Characterized Avalanche Voltage and Current

文件:254.47 Kbytes 页数:9 Pages

IRF

IRF8707

N-Channel Enhancement Mode MOSFET

Description The IRF8707 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =15A RDS(ON)

文件:552.16 Kbytes 页数:5 Pages

EVVOSEMI

翊欧

IRF8707TRPBF-TP

N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES ® Vos =30Vio=12A Roscn

文件:2.0017 Mbytes 页数:5 Pages

TECHPUBLIC

台舟电子

IRF8707GPBF

Control MOSFET of Sync-Buck  Converters used for Notebook  Processor Power

文件:252.53 Kbytes 页数:9 Pages

IRF

IRF8707GTRPBF

Control MOSFET of Sync-Buck  Converters used for Notebook  Processor Power

文件:252.53 Kbytes 页数:9 Pages

IRF

IRF8707PBF_15

Fully Characterized Avalanche Voltage and Current

文件:254.47 Kbytes 页数:9 Pages

IRF

IRF8707TRPBF

HEXFET짰 Power MOSFET

文件:254.47 Kbytes 页数:9 Pages

IRF

详细参数

  • 型号:

    IRF8707

  • 功能描述:

    MOSFET MOSFT 30V 11A 11.9mOhm 6.2nC Qg

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
24+
SOP8
36200
一级代理/全新现货/长期供应!
询价
IOR
23+
SOP-8
8650
受权代理!全新原装现货特价热卖!
询价
IR
23+
SOP-8
50000
全新原装正品现货,支持订货
询价
IR
21+
SOP-8
10000
原装现货假一罚十
询价
IR
22+
SOP-8
6000
终端可免费供样,支持BOM配单
询价
IR
2023+
SOP8
5800
进口原装,现货热卖
询价
友台
23+
SOP-8
14700
优势原装现货假一赔十
询价
IR
23+
SOP-8
7000
询价
IR
2450+
SOP-8
8850
只做原装正品假一赔十为客户做到零风险!!
询价
友台UMW
25+
DIP
3000
国产替换现货降本
询价
更多IRF8707供应商 更新时间2025-9-21 16:23:00