丝印：IRFR9120N；Package：TO-252；-100V P-Channel Enhancement Mode MOSFET

General Features VDS=-100V,ID=-8A RDS(ON)

文件：1.59396 Mbytes 页数：5 Pages

EVVOSEMI

翊欧

丝印：IRFR9120N；Package：TO-252；-100V P-Channel Enhancement Mode MOSFET

General Features VDS=-100V,ID=-8A RDS(ON)

文件：1.59396 Mbytes 页数：5 Pages

EVVOSEMI

翊欧

丝印：IRFR9120；Package：TO-252；-100V P-Channel Enhancement Mode MOSFET

General Features Vbs =-100V,Ip =-8A Rosin)

文件：1.6735 Mbytes 页数：5 Pages

UMW

友台半导体

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -6.6A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.48Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.7 Kbytes 页数：2 Pages

ISC

无锡固电

Ultra Low On-Resistance

Description The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

文件：883.59 Kbytes 页数：10 Pages

KERSEMI

ULTRA LOW ON-RESISTANCE

HEXFET® Power MOSFET

文件：3.87272 Mbytes 页数：10 Pages

KERSEMI

HEXFET Power MOSFET ( VDSS = -100V , RDS(on) = 0.48廓 , ID = -6.6A )

HEXFET® Power MOSFET

文件：262.32 Kbytes 页数：11 Pages

IRF

Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.6A)

文件：117.52 Kbytes 页数：10 Pages

IRF

ULTRA LOW ON RESISTANCE

文件：263.29 Kbytes 页数：11 Pages

IRF

ULTRA LOW ON RESISTANCE

文件：263.29 Kbytes 页数：11 Pages

IRF