HEXFET Power MOSFET

Description The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switc

文件：260.41 Kbytes 页数：10 Pages

IRF

Fully Characterized Avalanche Voltage and Current

文件：260.41 Kbytes 页数：10 Pages

IRF

Fully Characterized Avalanche Voltage and Current

文件：260.41 Kbytes 页数：10 Pages

IRF

30V 2N-Channel Enhancement Mode MOSFET

General Description The is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability ap

文件：2.08671 Mbytes 页数：6 Pages

UMW

友台半导体

HEXFET Power MOSFET

Description The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switc

文件：260.41 Kbytes 页数：10 Pages

IRF

Green device available.

文件：654.49 Kbytes 页数：4 Pages

KERSEMI