Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipa

文件：566.6 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet p

文件：158.27 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

isc P-Channel MOSFET Transistor

• DESCRIPTION • Power management in notebook computer • Portable equipment and battery powered systems • FEATURES • Static drain-source on-resistance: RDS(on)≤0.3Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：390.18 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel 100 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Power Switch • Load Switch in High Current Applications • DC/DC Converters

文件：1.00298 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

HEXFET POWER MOSFET

文件：3.52791 Mbytes 页数：7 Pages

IRF

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet p

文件：158.27 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司