P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

文件：508.31 Kbytes 页数：12 Pages

SAMSUNG

三星

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliablility

文件：381.33 Kbytes 页数：6 Pages

SAMSUNG

三星

P-CHANNEL POWER MOSFETS

FEATURES Low RDS(on) PACKAGE STYLE Package Type Part Number Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Extended safe operating area Improved high temperature reliability

文件：210.09 Kbytes 页数：5 Pages

SAMSUNG

三星

19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs

These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

文件：59.77 Kbytes 页数：7 Pages

INTERSIL

P-CHANNEL POWER MOSFETS

Description The IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, and RF1S9540SM are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power field effect tran

文件：424.12 Kbytes 页数：7 Pages

HARRIS

Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：125.1 Kbytes 页数：8 Pages

IRF

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -19A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.37 Kbytes 页数：2 Pages

ISC

无锡固电

TO-220-3L Plas ti c-E n c a p s u late MOSFETS

FEATURES ·Drain Current –ID=-19A@ TC=25℃ ·Drain Source Voltage- : VDSS= -100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.2Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,

文件：685.64 Kbytes 页数：2 Pages

DGNJDZ

南晶电子

P-Channel MOSFET

Description： This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications Features： 1) VDS=-100V,ID=-20A,RDS(ON)

文件：1.19389 Mbytes 页数：6 Pages

EVVOSEMI

翊欧

Power MOSFET

文件：4.20729 Mbytes 页数：7 Pages

KERSEMI