HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117m廓 , ID = -23A )

Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. ● Advanced Proces

文件：331.4 Kbytes 页数：11 Pages

IRF

HEXFET짰 Power MOSFET

文件：2.55413 Mbytes 页数：9 Pages

IRF

Advanced Process Technology

文件：6.34203 Mbytes 页数：8 Pages

KERSEMI

Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：187.11 Kbytes 页数：10 Pages

IRF

HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117m廓 , ID = -23A )

Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. ● Advanced Proces

文件：331.4 Kbytes 页数：11 Pages

IRF

Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：187.11 Kbytes 页数：10 Pages

IRF

丝印：F9540NS；Package：TO-263；P-Channel Power MOSFET

Application + DC/DC Converter « Portable equipment and batt « Power Switch

文件：3.53757 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

Available in Tape and Reel

DESCRIPTION The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications beca

文件：778.12 Kbytes 页数：8 Pages

KERSEMI

HEXFET Power MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件：198.15 Kbytes 页数：6 Pages

IRF

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • 175 °C operating temperature • Fast Switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provi

文件：206.61 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世科技