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IRF9610

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The TO-220 p

文件:1.64409 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRF9610

Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)

Description The HEXFET technology is the key to international Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. • Dynamic

文件:161.49 Kbytes 页数:6 Pages

IRF

IRF9610

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -1.8A@ TC=25℃ ·Drain Source Voltage -VDSS=-200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3Ω(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:290.23 Kbytes 页数:2 Pages

ISC

无锡固电

IRF9610

SEMICONDUCTORS

文件:2.43533 Mbytes 页数:31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF9610

Power MOSFET

文件:157.73 Kbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRF9610

Power MOSFET

文件:271.64 Kbytes 页数:9 Pages

VishayVishay Siliconix

威世威世科技公司

IRF9610

Power MOSFET

• Dynamic dV/dt rating\n• P-channel\n• Fast switching;

Vishay

威世

IRF9610

Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)

Infineon

英飞凌

IRF9610PBF

Power MOSFET

DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The TO-220 p

文件:1.64409 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRF9610S

Available in Tape and Reel

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It prov

文件:206.04 Kbytes 页数:10 Pages

VishayVishay Siliconix

威世威世科技公司

详细参数

  • 型号:

    IRF9610

  • 功能描述:

    MOSFET P-Chan 200V 1.8 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
25+
TO
18000
原厂直接发货进口原装
询价
SEC
24+/25+
15
原装正品现货库存价优
询价
IR
2015+
TO-220
19889
一级代理原装现货,特价热卖!
询价
IR
24+
原厂封装
2000
原装现货假一罚十
询价
IR
15+
TO-220
11560
全新原装,现货库存,长期供应
询价
IR
23+
TO
5000
原装正品,假一罚十
询价
IR
16+
TO-220
10000
全新原装现货
询价
MOT
23+
NA
6500
全新原装假一赔十
询价
IR
25+23+
TO-220
25061
绝对原装正品全新进口深圳现货
询价
IR
24+
TO-220
6430
原装现货/欢迎来电咨询
询价
更多IRF9610供应商 更新时间2025-11-18 16:18:00