| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF9610 | Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The TO-220 p 文件:1.64409 Mbytes 页数:8 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
IRF9610 | Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A) Description The HEXFET technology is the key to international Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. • Dynamic 文件:161.49 Kbytes 页数:6 Pages | IRF | IRF | |
IRF9610 | isc P-Channel MOSFET Transistor FEATURES ·Drain Current -ID= -1.8A@ TC=25℃ ·Drain Source Voltage -VDSS=-200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3Ω(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件:290.23 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | |
IRF9610 | SEMICONDUCTORS 文件:2.43533 Mbytes 页数:31 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | |
IRF9610 | Power MOSFET 文件:157.73 Kbytes 页数:8 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
IRF9610 | Power MOSFET 文件:271.64 Kbytes 页数:9 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
IRF9610 | Power MOSFET • Dynamic dV/dt rating\n• P-channel\n• Fast switching; | Vishay 威世 | Vishay | |
IRF9610 | Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A) | Infineon 英飞凌 | Infineon | |
Power MOSFET DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The TO-220 p 文件:1.64409 Mbytes 页数:8 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Available in Tape and Reel DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It prov 文件:206.04 Kbytes 页数:10 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay |
详细参数
- 型号:
IRF9610
- 功能描述:
MOSFET P-Chan 200V 1.8 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
TO |
18000 |
原厂直接发货进口原装 |
询价 | ||
SEC |
24+/25+ |
15 |
原装正品现货库存价优 |
询价 | |||
IR |
2015+ |
TO-220 |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
IR |
24+ |
原厂封装 |
2000 |
原装现货假一罚十 |
询价 | ||
IR |
15+ |
TO-220 |
11560 |
全新原装,现货库存,长期供应 |
询价 | ||
IR |
23+ |
TO |
5000 |
原装正品,假一罚十 |
询价 | ||
IR |
16+ |
TO-220 |
10000 |
全新原装现货 |
询价 | ||
MOT |
23+ |
NA |
6500 |
全新原装假一赔十 |
询价 | ||
IR |
25+23+ |
TO-220 |
25061 |
绝对原装正品全新进口深圳现货 |
询价 | ||
IR |
24+ |
TO-220 |
6430 |
原装现货/欢迎来电咨询 |
询价 |
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