HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：169.99 Kbytes 页数：7 Pages

IRF

ULTRA LOW ON TESISTANCE

文件：175.44 Kbytes 页数：7 Pages

IRF

ULTRA LOW ON TESISTANCE

文件：175.44 Kbytes 页数：7 Pages

IRF

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and wit

文件：341.13 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

Dual N-Channel 20-V (D-S) MOSFET

Dual N-Channel 20-V (D-S) MOSFET

文件：89.98 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-channel enhancement mode field-effect transistor

Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: Si9956DY in SOT96-1 (SO8). Features ■ Low on-state resistance ■ Fast switching ■ TrenchMOS™ technology. Applications ■ DC to DC convertors ■ DC

文件：253.84 Kbytes 页数：13 Pages

PHI

PHI