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IRF9956PBF规格书详情
描述 Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Generation V Technology
● Ultra Low On-Resistance
● Dual N-Channel MOSFET
● Surface Mount
● Very Low Gate Charge and Switching Losses
● Fully Avalanche Rated
● Lead-Free
产品属性
- 型号：
IRF9956PBF
- 功能描述：
MOSFET 30V N-CH HEXFET 7.7mOhms 11nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR(国际整流器) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
IR |
24+ |
SOP8 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
IR |
22+ |
SOP-8 |
8000 |
原装正品支持实单 |
询价 | ||
IR |
17+ |
SOP8 |
6 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
19+ |
SOP8 |
33911 |
询价 | |||
IR |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
询价 | ||
IR |
2450+ |
SOP-8 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
询价 | ||
IR(国际整流器) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
IR |
22+ |
SOP8 |
20000 |
公司只做原装 品质保障 |
询价 | ||
Infineon Technologies |
23+ |
原装 |
7000 |
询价 |
