首页>IRF9952TRPBF>规格书详情
IRF9952TRPBF中文资料IRF数据手册PDF规格书
IRF9952TRPBF规格书详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
● Generation V Technology
● Ultra Low On-Resistance
● Dual N and P Channel MOSFET
● Surface Mount
● Very Low Gate Charge and Switching Losses
● Fully Avalanche Rated
● Lead-Free
产品属性
- 型号：
IRF9952TRPBF
- 功能描述：
MOSFET MOSFT DUAL N/PCh 30V 3.5A
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
SOIC-8 |
37048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
询价 | ||
INFINEON |
23+ |
K-B |
20000 |
只有原装,请来电咨询 |
询价 | ||
IR |
24+ |
SO-8 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
IR |
20+ |
SOP-8 |
2960 |
诚信交易大量库存现货 |
询价 | ||
INFINEON/IR |
1907+ |
NA |
4000 |
20年老字号,原装优势长期供货 |
询价 | ||
IR |
04+ |
SOP-8 |
81454 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
INFINEON |
21+ |
SOP-8 |
12000 |
全新原装公司现货
|
询价 | ||
IR |
22+ |
SOIC8 |
25000 |
只有原装原装,支持BOM配单 |
询价 | ||
INFINEON/IR |
23+ |
SO-8 |
50000 |
原装正品 支持实单 |
询价 | ||
IOR |
2025+ |
SOP8 |
4825 |
全新原厂原装产品、公司现货销售 |
询价 |
