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IRF9952TRPBF

Generation V Technology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

9952

3MTMSingleCoatedMedicalPlasticTape

3MMinnesota Mining and Manufacturing

明尼苏达矿务明尼苏达矿务及制造业公司

9952

Electronic,2C#16StrTC,PVC-NYLIns,OATCBrd,PVCJkt

ProductDescription Electronic,2Conductor16AWG(19x29)TinnedCopper,PVC-NYLInsulation,OverallTinnedCopperBraid(90)Shield,PVCOuterJacket

BELDEN

Belden Inc.

AD9952

400MSPS14-Bit,1.8VCMOSDirectDigitalSynthesizer

GENERALDESCRIPTION TheAD9952isadirectdigitalsynthesizer(DDS)featuringa14-bitDACoperatingupto400MSPS.TheAD9952usesadvancedDDStechnology,coupledwithaninternalhighspeed,highperformanceDACtoformadigitallyprogrammable,completehighfrequencysynthesizercapableof

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD9952YSV

400MSPS14-Bit,1.8VCMOSDirectDigitalSynthesizer

GENERALDESCRIPTION TheAD9952isadirectdigitalsynthesizer(DDS)featuringa14-bitDACoperatingupto400MSPS.TheAD9952usesadvancedDDStechnology,coupledwithaninternalhighspeed,highperformanceDACtoformadigitallyprogrammable,completehighfrequencysynthesizercapableof

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD9952YSV

400MSPS14-Bit,1.8VCMOSDirectDigitalSynthesizer

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD9952YSVZ

400MSPS14-Bit,1.8VCMOSDirectDigitalSynthesizer

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AE9952

Cat5eUTPPatchCable

ASSMANNASSMANN WSW COMPONENTS

ASSMANN WSW组件有限公司

AP9952GP-HF

N-CHANNELENHANCEMENTMODEPOWERMOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AUIRF9952Q

AdvancedPlanarTechnologyLowOn-Resistance

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

IRFInternational Rectifier

英飞凌英飞凌科技公司

AUIRF9952Q

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AUIRF9952QTR

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AUIRF9952QTR

AdvancedPlanarTechnologyLowOn-Resistance

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

IRFInternational Rectifier

英飞凌英飞凌科技公司

CEM9952A

DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES ■30V,3.7A,RDS(ON)=80mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■-30V,-2.9A,RDS(ON)=100mΩ@VGS=-10V. RDS(ON)=150mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapab

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CHM9952AJPT

DualEnhancementModeFieldEffectTransistor

N-channel:VOLTAGE30VoltsCURRENT3.7Ampere P-channel:VOLTAGE30VoltsCURRENT2.9Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Leadfreeproductisacquired. *Highpowerandcurrenthandingcapability. APPLICATION *Servomo

CHENMKOCHENMKO

CHENMKO

IRF9952

PowerMOSFET(Vdss=-30V)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF9952PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF9952PBF

ULTRALOWONRESISTANCE

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF9952QPBF

AdvancedProcessTechnology

Description TheseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF9952QPBF

HEXFETPowerMOSFET

Description TheseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit

IRFInternational Rectifier

英飞凌英飞凌科技公司

详细参数

  • 型号:

    IRF9952TRPBF

  • 功能描述:

    MOSFET MOSFT DUAL N/PCh 30V 3.5A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INFINEON/IR
1907+
NA
4000
20年老字号,原装优势长期供货
询价
Infineon Technologies
24+
8-SOIC(0.154,3.90mm 宽)
30000
晶体管-分立半导体产品-原装正品
询价
IR
18+
SOP-8
9800
一级代理/全新原装现货/长期供应!
询价
IR
2020+
SO-8
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
IR
2021+
SOP8
8903
诚信经营..品质保证..价格优势
询价
INFINEON
21+
SOP-8
12000
全新原装公司现货
询价
INFINEON
21+
SOP-8
10080
原装,诚信经营
询价
INFINEON
21+
SOP-8
60000
原装正品进口现货
询价
INFINEON
2339+
SOP-8
32280
原装现货 假一罚十!十年信誉只做原装!
询价
INFINEON
21+
SO-8
8000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
更多IRF9952TRPBF供应商 更新时间2024-5-16 19:20:00