3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching r

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Intersil

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件：1.92643 Mbytes 页数：7 Pages

VishayVishay Siliconix

威世科技

Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.5A)

Description The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processingof the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. • Dynamic d

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IRF

Power MOSFET

文件：281.92 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件：159.69 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

SEMICONDUCTORS

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Power MOSFET

• Dynamic dV/dt rating\n• P-channel\n• Fast switching;

Vishay

威世科技

Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.5A)

Infineon

英飞凌

3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET

Renesas

瑞萨

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件：1.92643 Mbytes 页数：7 Pages

VishayVishay Siliconix

威世科技