P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

文件：508.31 Kbytes 页数：12 Pages

Samsung

三星

-19A, -100V, 0.200 Ohm, P-Channel Power MOSFET

-19A, -100V, 0.200 Ohm, P-Channel Power MOSFET These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these pow

文件：59.31 Kbytes 页数：7 Pages

Intersil

TRANSISTORS P-CHANNEL(Vdss=-100V, Rds(on)=0.2ohm, Id=-18A)

Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reve

文件：148.2 Kbytes 页数：7 Pages

IRF

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -18A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：309.4 Kbytes 页数：2 Pages

ISC

无锡固电

P-CHANNEL POWER MOSFET

FEATURES • HERMETICALLY SEALED TO–3 METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE

文件：22.16 Kbytes 页数：2 Pages

SEME-LAB

Seme LAB

Simple Drive Requirements

文件：152.35 Kbytes 页数：7 Pages

IRF

isc N-Channel MOSFET Transistor

文件：290.73 Kbytes 页数：2 Pages

ISC

无锡固电

HiRel MOSFETs

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Infineon

英飞凌

Simple Drive Requirements

文件：152.35 Kbytes 页数：7 Pages

IRF

Single channel high reliability power MOSFETs

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Infineon

英飞凌