P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

文件：378.27 Kbytes 页数：6 Pages

Samsung

三星

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

文件：508.31 Kbytes 页数：12 Pages

Samsung

三星

12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs

12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these powe

文件：63.6 Kbytes 页数：7 Pages

Intersil

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet p

文件：158.27 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipa

文件：566.6 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

TRANSISTORS

Features: ■ P-Channel Versatility ■ Compact Plastic Package ■ Fast Switching ■ Low Drive Current ■ Ease of Paralleling ■ Excellent Temperature Stability

文件：449.2 Kbytes 页数：6 Pages

IRF

isc P-Channel Mosfet Transistor

FEATURES ·Drain Current : ID= -12A@ TC=25℃ ·Drain Source Voltage : VDSS= -100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D

文件：303.03 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel MOSFET

■ Features ● VDS (V) =-100V ● ID =-13 A (VGS =-10V) ● RDS(ON)

文件：1.26984 Mbytes 页数：3 Pages

KEXIN

科信电子

12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs

Features • 12A, 100V • rDS(ON) = 0.300W • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC B

文件：155.69 Kbytes 页数：6 Pages

SYC

SEMICONDUCTORS

文件：2.43533 Mbytes 页数：31 Pages

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