IRF840

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

IRF840

PowerMOS transistor Avalanche energy rated

DESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitched modepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.TheIRF840issuppliedin

IRF840

N - CHANNEL 500V - 0.75ohm - 8A - TO-220 PowerMESH] MOSFET

IRF840

N-CHANNEL POWER MOSFETS

FEATURES •LowerRDS(ON) •Improvedinductiveruggedness •Fastswitchingtimes •Ruggedpolysilicongatecellstructure •Lowerinputcapacitance •Extendedsafeoperationarea •Improvedhightemperaturereliability

IRF840

500V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

IRF840

N-Channel Power MOSFETs, 8A, 450 V/500V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedsepeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers.

IRF840

8A, 500V, 0.850 Ohm, N-Channel Power MOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitchin

IRF840

Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

500Volt,0.85OhmHEXFETTO-220ABPlasticPackage TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancelineofpowerMOSFETtransistors.TheefficientgemmetryanduniqueprocessingofthislatestStateoftheArtdesignachieves:verylowon-stateresistancecombinedwithhight

IRF840

TRANSISTORS N-CHANNEL

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTORSN-CHANNEL

IRF840

Power MOSFET ( VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A )

PowerMOSFET VDSS=500V,RDS(on)=0.85ohm,ID=8.0A NChannel

IRF840

TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET

Description Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplicationssuchaspowersupplies,PWMmotorcontrolsandotherinductiveloads,theavalancheenergycap

IRF840

POWER MOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic

IRF840

isc N-Channel Mosfet Transistor

Designedforhighvoltage,highspeedswitchingpowerapplicationssuchasswitchingregulators,converters,solenoidandrelay FEATURES 1.DrainCurrent–ID=8.0A@TC=25℃ 2.DrainSourceVoltage-:VDSS=500V(Min) 3.StaticDrain-SourceOn-Resistance:RDS(on)=0.8

IRF840

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

IRF840

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

IRF840

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheTO-220andpackageisuniversallypreferredforallcommercial-industrialapplications.Thedeviceissuitedforswitchmodepowersupplies,DC-AC convertersandhighcurrenthighspeedswitchingcircuits.APECMOSFETprovidethepowerdesignerwiththebestcombinationoffasts

IRF840

N-Channel Power MOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ●VGSRatedat±20V ●SiliconGateforFastSwitchingSpe

IRF840

Drives 1 x 70W HID lamp

Overview TheIRPLHID2Areferencedesignkitconsistsofacompleteballastsolutionfora70WHIDlamp.ThedesigncontainsanEMIfilter,lowvoltagepowersupply,activepowerfactorcorrectionandaballastcontrolcircuitusingtheIRS2573D.Thisdemoboardisintendedtohelpwiththeevalua

IRF840

N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

FEATURE NchannelinaplasticTO220package. Theyareintendedforuseinoff-lineswitchedmodepower supplies,T.V.andcomputermonitorpowersupplies. DC-DCconverters,motorcontrolcircuitsandgeneralpurpose switchingapplications CompliancetoRoHS.

IRF840

N-Channel Power MOSFET

DESCRIPTION TheNellIRF840areN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. Theyaredesignedasanextremelyefficientandreliabledevice