500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：911.1 Kbytes 页数：10 Pages

Fairchild

仙童半导体

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

文件：334.39 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

POWER MOSFET

GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effic

文件：132.59 Kbytes 页数：5 Pages

SUNTAC

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve signiticantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. I

文件：1.51385 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive

文件：1.028819 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive

文件：175.22 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 V VGS rating • Reduced Ciss, Coss, Crss • Extremely high frequency operation • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * Th

文件：231.4 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

Description This new series of low charge HEXFET®power MOSFETs achieve significant lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS (low charge device MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduce gate drive requirem

文件：173.93 Kbytes 页数：10 Pages

IRF

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive

文件：1.028819 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve signiticantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. I

文件：1.51385 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司