TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET

Description Designed to withstand high energy in the avalanche mode and switch efficiently. Also offer a drain-to-source diode with fast recovery time. Designed for high voltage, high speed applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy cap

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DCCOM

道全

Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

500 Volt, 0.85 Ohm HEXFET TO-220AB Plastic Package The HEXFET technology is the key to International Rectifiers advance line of power MOSFET transistors. The efficient gemmetry and unique processing of this latest State of the Art design achieves: very low on-state resistance combined with high t

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IRF

TRANSISTORS N-CHANNEL

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS N-CHANNEL

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IRF

Drives 1 x 70W HID lamp

Overview The IRPLHID2A reference design kit consists of a complete ballast solution for a 70W HID lamp. The design contains an EMI filter, low voltage power supply, active power factor correction and a ballast control circuit using the IRS2573D. This demo board is intended to help with the evalua

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IRF

isc N-Channel Mosfet Transistor

Designed for high voltage, high speed switching power applications such as switching regulators, converters, solenoid and relay FEATURES 1. Drain Current –ID=8.0A@ TC=25℃ 2. Drain Source Voltage- : VDSS= 500V(Min) 3. Static Drain-Source On-Resistance : R DS(on)= 0.8

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ISC

无锡固电

POWER MOSFET

GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effic

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SUNTAC

N - CHANNEL 500V - 0.75ohm - 8A - TO-220 PowerMESH] MOSFET

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STMICROELECTRONICS

意法半导体

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

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STMICROELECTRONICS

意法半导体

N-Channel Power MOSFETs

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ● VGS Rated at ±20V ● Silicon Gate for Fast Switching Spe

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ARTSCHIP

N-Channel Power MOSFET

DESCRIPTION The Nell IRF840 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are designed as an extremely efficient and reliable device

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NELLSEMI

尼尔半导体