零件型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
Power MOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Power MOSFET FEATURES •Ultralowgatecharge •Reducedgatedriverequirement •Enhanced30VVGSrating •ReducedCiss,Coss,Crss •Extremelyhighfrequencyoperation •Repetitiveavalancherated •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Th | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) Description ThisnewseriesoflowchargeHEXFET®powerMOSFETsachievesignificantlowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOS(lowchargedeviceMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducegatedriverequirem | IRF International Rectifier | IRF | ||
Power MOSFET FEATURES •Ultralowgatecharge •Reducedgatedriverequirement •Enhanced30VVGSrating •ReducedCiss,Coss,Crss •Extremelyhighfrequencyoperation •Repetitiveavalancherated •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Th | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Power MOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Power MOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Power MOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HEXFET POWER MOSFET
| IRF International Rectifier | IRF | ||
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.It | IRF International Rectifier | IRF |
技术参数
- Ptot(W):
32
- ID(A):
8
- BVDSS(V):
500
- Package:
TO-220
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
新 |
进口原装 |
3000 |
库存现货 |
询价 | ||
IR |
TO-220 |
5800 |
专业分销全系列产品!绝对原装正品!量大可订!价格优 |
询价 | |||
IR/国际整流器 |
23+ |
NA |
7825 |
原装正品!清仓处理! |
询价 | ||
IR |
25+ |
TO-220 |
20300 |
IR原装特价IRF840即刻询购立享优惠#长期有货 |
询价 | ||
IR |
24+ |
TO220 |
5000 |
只做原装正品!现货库存!公司可开16点增值税发票! |
询价 | ||
IR |
24+ |
TO-220 |
2000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
ST |
24+ |
TO-220 |
4000 |
原装原厂代理 可免费送样品 |
询价 | ||
IR 墨西哥 |
02+ |
TO-220 |
1120 |
只做原装正品 |
询价 | ||
IR(国际整流器) |
2023+ |
N/A |
4550 |
全新原装正品 |
询价 | ||
IR |
24+ |
TO-220 |
66800 |
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力! |
询价 |
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