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IRF840LCS

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive

文件:1.028819 Mbytes 页数:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF840LCS

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive

文件:175.22 Kbytes 页数:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF840LCS

Power MOSFET

FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 V VGS rating • Reduced Ciss, Coss, Crss • Extremely high frequency operation • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * Th

文件:231.4 Kbytes 页数:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF840LCS

Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

Description This new series of low charge HEXFET®power MOSFETs achieve significant lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS (low charge device MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduce gate drive requirem

文件:173.93 Kbytes 页数:10 Pages

IRF

IRF840LCS

Power MOSFET

文件:156.42 Kbytes 页数:2 Pages

TEL

IRF840LCS_V01

Power MOSFET

FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 V VGS rating • Reduced Ciss, Coss, Crss • Extremely high frequency operation • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * Th

文件:231.4 Kbytes 页数:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF840LCSPBF

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive

文件:1.028819 Mbytes 页数:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF840LCSTRR

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive

文件:1.028819 Mbytes 页数:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF840LCSTRRPBF

Power MOSFET

DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive

文件:175.22 Kbytes 页数:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF840LCSPBF

Power MOSFET

文件:231.4 Kbytes 页数:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

详细参数

  • 型号:

    IRF840LCS

  • 功能描述:

    MOSFET N-Chan 500V 8.0 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
17+
D2-PAK
31518
原装正品 可含税交易
询价
IR
2015+
D2-Pak
12500
全新原装,现货库存长期供应
询价
IR
05+
原厂原装
22951
只做全新原装真实现货供应
询价
IR
25+
TO-262
160
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IOR
24+
TO220
30
询价
ir
24+
N/A
6980
原装现货,可开13%税票
询价
IR
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
询价
IR
2447
D2-PAK
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
VISHAY
25+
TO-263
3000
就找我吧!--邀您体验愉快问购元件!
询价
IR
23+
TO-263
50000
全新原装正品现货,支持订货
询价
更多IRF840LCS供应商 更新时间2026-1-24 14:00:00