Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. It

文件：172.32 Kbytes 页数：6 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die size up to HEX-4. It provides the

文件：1.03948 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：198.2 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

Advanced Power MOSFET

FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 0.638Ω (Typ.)

文件：227.93 Kbytes 页数：7 Pages

Fairchild

仙童半导体

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：695.11 Kbytes 页数：9 Pages

Fairchild

仙童半导体

HEXFET Power MOSFET (-55V, 0.1ohm, -14A)

文件：122.02 Kbytes 页数：8 Pages

IRF