IRF840LCS中文资料威世科技数据手册PDF规格书

FEATURES

• Ultra low gate charge

• Reduced gate drive requirement

• Enhanced 30 V VGS rating

• Reduced Ciss, Coss, Crss

• Extremely high frequency operation

• Repetitive avalanche rated

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

Note

* This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

DESCRIPTION

This series of low charge power MOSFETs achieve

significantly lower gate charge then conventional Power

MOSFETs. Utilizing the new LCDMOS (low charge device

Power MOSFETs) technology, the device improvements are

achieved without added product cost, allowing for reduced

gate drive requirements and total system savings. In

addition, reduced switching losses and improved efficiency

are achievable in a variety of high frequency applications.

Frequencies of a few MHz at high current are possible using

the new low charge Power MOSFETs.

These device improvements combined with the proven

ruggedness and reliability that characterize Power

MOSFETs offer the designer a new power transistor

standard for switching applications.