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IRF841

N-Channel Power MOSFETs, 8A, 450 V/500V

Description These devices are n-channel, enhancement mode, power MOSFETs designed sepecially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.

文件:150.37 Kbytes 页数:5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF841

N-CHANNEL POWER MOSFETS

FEATURES • Lower RDS(ON) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operation area • Improved high temperature reliability

文件:272.29 Kbytes 页数:5 Pages

Samsung

三星

IRF841

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

文件:146.97 Kbytes 页数:2 Pages

Motorola

摩托罗拉

IRF841

TRANSISTORS N-CHANNEL

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS N-CHANNEL

文件:544.88 Kbytes 页数:8 Pages

IRF

IRF841

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

文件:334.39 Kbytes 页数:9 Pages

STMICROELECTRONICS

意法半导体

IRF841

N-Channel Power MOSFETs

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ● VGS Rated at ±20V ● Silicon Gate for Fast Switching Spe

文件:271.96 Kbytes 页数:5 Pages

ARTSCHIP

IRF841

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Rugged Gate Oxide Technology

文件:66.99 Kbytes 页数:2 Pages

ISC

无锡固电

IRF841

N-Channel Enhancement-Mode Silicon Gate TMOS Power FET

恩XP

恩智浦

恩XP

IRF841

Trans MOSFET N-CH 450V 8A 3-Pin(3+Tab) TO-220AB

NJS

IRF841FI

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Rugged Gate Oxide Technology

文件:65.97 Kbytes 页数:2 Pages

ISC

无锡固电

技术参数

  • Minimum Operating Temperature:

    -55°C

  • Maximum Power Dissipation:

    125000mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Gate Source Voltage:

    ±20V

  • Maximum Drain Source Voltage:

    450V

  • Maximum Continuous Drain Current:

    8A

  • Material:

    Si

  • Configuration:

    Single

  • Channel Type:

    N

  • Channel Mode:

    Enhancement

  • Category:

    Power MOSFET

供应商型号品牌批号封装库存备注价格
HARR
95+
TO220
11
只售原装正品
询价
sam
24+
N/A
6980
原装现货,可开13%税票
询价
IR
21+
TO220
10000
原装现货假一罚十
询价
IR
22+
TO-220
6000
十年配单,只做原装
询价
IRF841
31
31
询价
sam
24+
500000
行业低价,代理渠道
询价
IR/VISHAY
23+
TO-220
6000
原装正品,支持实单
询价
HARR
23+
TO-220
89630
当天发货全新原装现货
询价
sam
2023+
原厂封装
50000
原装现货
询价
IR
23+
TO-220
8000
只做原装现货
询价
更多IRF841供应商 更新时间2025-10-4 9:31:00