IRF840LCS中文资料IRF数据手册PDF规格书
IRF840LCS规格书详情
描述 Description
This new series of low charge HEXFET®power MOSFETs achieve significant lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS (low charge device MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduce gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency and achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge MOSFETs.
These device improvements combined with the proven ruggedness and reliability that characterize of HEXFET power MOSFETs offer the designer a new power transistor standard for switching applications.
● Ultra Low Gate Charge
● Reduced Gate Drive Requirement
● Enhanced 30V VGS Rating
● Reduced CISS, COSS, CRSS
● Extremely High Frequency Operation
● Repetitive Avalanche Rated
产品属性
- 型号：
IRF840LCS
- 功能描述：
MOSFET N-Chan 500V 8.0 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
20 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR/VISHAY |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
VISHAY |
24+/25+ |
D2-PAK(TO-263) |
1000 |
原装正品现货库存价优 |
询价 | ||
IR |
99+ |
TO-263 |
750 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
1822+ |
TO263 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
IRF840LCS |
21442 |
21442 |
询价 | ||||
IR |
99+ |
TO-263 |
750 |
询价 | |||
VISHAY |
23+ |
TO-263-3 (D2PAK) |
50000 |
原装正品 支持实单 |
询价 | ||
IR |
23+ |
TO-263 |
30000 |
全新原装现货,价格优势 |
询价 | ||
IR |
2025+ |
SOT220 |
3715 |
全新原厂原装产品、公司现货销售 |
询价 |
