-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

文件：57.47 Kbytes 页数：7 Pages

Intersil

isc P-Channel MOSFET Transistor

• DESCRIPTION • Be designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. • FEATURES • Static drain-source on-resistance: RDS(on)≤0.15Ω •

文件：319.25 Kbytes 页数：2 Pages

ISC

无锡固电

-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

文件：152.99 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans MOSFET P-CH 100V 25A 3-Pin(2+Tab) TO-3

NJS