丝印：IRF7809；Package：SOP-8；30V N-Channel MOSFET

Description The IRF7809AV has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7809AV offers particulary low RDS(on) and high Cdv/dt immunity for synchronous FET applications. The pac

文件：883.1 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：IRF7809；Package：SOP-8；30V N-Channel MOSFET

Description The IRF7809AV has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7809AV offers particulary low RDS(on) and high Cdv/dt immunity for synchronous FET applications. The pac

文件：883.1 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：IRF7809；Package：SOP-8；30V N-Channel MOSFET

Description The IRF7809AV has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7809AV offers particulary low RDS(on) and high Cdv/dt immunity for synchronous FET applications. The pac

文件：883.1 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：IRF7809；Package：SOP-8；30V N-Channel MOSFET

Description The IRF7809AV has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7809AV offers particulary low RDS(on) and high Cdv/dt immunity for synchronous FET applications. The pac

文件：883.1 Kbytes 页数：8 Pages

UMW

友台半导体

Chipset for DC-DC Converters

Description These new devices employ advanced HEXFET® Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC converters that power the latest generation of microprocessor

文件：128.08 Kbytes 页数：4 Pages

IRF

PROVISIONAL DATASHEET

Applications • High Frequency Synchronous Buck Converters for Computer Processor Power • High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use • 100 R G Tested Benefits • Very Low RDS(on) at 4.5V VGS • Ultra-Low Gate Impedance

文件：133.63 Kbytes 页数：4 Pages

IRF

N-Channel Application-Specific MOSFETs

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.

文件：114.2 Kbytes 页数：8 Pages

IRF

N-Channel Application-Specific MOSFETs

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.

文件：593.59 Kbytes 页数：8 Pages

IRF

N-Channel Application-Specific MOSFETs

文件：132.03 Kbytes 页数：4 Pages

IRF

N-Channel Application-Specific MOSFETs

文件：599.01 Kbytes 页数：8 Pages

IRF