N-Channel Application-Specific MOSFETs

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.

文件：114.2 Kbytes 页数：8 Pages

IRF

N-Channel Application-Specific MOSFETs

Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.

文件：593.59 Kbytes 页数：8 Pages

IRF

丝印：IRF7809；Package：SOP-8；30V N-Channel MOSFET

Description The IRF7809AV has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7809AV offers particulary low RDS(on) and high Cdv/dt immunity for synchronous FET applications. The pac

文件：883.1 Kbytes 页数：8 Pages

UMW

友台半导体

N-Channel Application-Specific MOSFETs

文件：599.01 Kbytes 页数：8 Pages

IRF

N-Channel Application-Specific MOSFETs

文件：599.01 Kbytes 页数：8 Pages

IRF

Industry-standard pinout SO-8 Package

文件：206.2 Kbytes 页数：8 Pages

IRF

Industry-standard pinout SO-8 Package

文件：206.2 Kbytes 页数：8 Pages

IRF

N-Channel Application-Specific MOSFETs

文件：599.01 Kbytes 页数：8 Pages

IRF

采用 SO-8 封装的 IR MOSFET 30 V

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Infineon

英飞凌

30V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

\n优势:\n• 工业标准引出线 SO-8 封装\n• 与现有表面封装技术兼容\n• 符合 RoHS ， 无卤素\n• 符合MSL1，工业认证;

Infineon

英飞凌