丝印：IRF7319；Package：SOP-8；Dual N P Channel MOSFET

Features N-Ch: e Vos(v)=30V ® Rosony)

文件：430.91 Kbytes 页数：10 Pages

UMW

友台半导体

丝印：IRF7319；Package：SOP-8；Dual N P Channel MOSFET

Features N-Ch: Vos (v)=30V Rosoy(on)

文件：402.24 Kbytes 页数：10 Pages

EVVOSEMI

翊欧

丝印：IRF7319；Package：SOP-8；Dual N P Channel MOSFET

Features N-Ch: e Vos(v)=30V ® Rosony)

文件：430.91 Kbytes 页数：10 Pages

UMW

友台半导体

丝印：IRF7319；Package：SOP-8；Dual N P Channel MOSFET

Features N-Ch: e Vos(v)=30V ® Rosony)

文件：430.91 Kbytes 页数：10 Pages

UMW

友台半导体

丝印：IRF7319；Package：SOP-8；Dual N P Channel MOSFET

Features N-Ch: e Vos(v)=30V ® Rosony)

文件：430.91 Kbytes 页数：10 Pages

UMW

友台半导体

丝印：IRF7319；Package：SOP-8；Dual N P Channel MOSFET

Features N-Ch: Vos (v)=30V Rosoy(on)

文件：402.24 Kbytes 页数：10 Pages

EVVOSEMI

翊欧

Dual N P Channel MOSFET

Features N-Ch: Vos (v)=30V Rosoy(on)

文件：402.24 Kbytes 页数：10 Pages

EVVOSEMI

翊欧

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：137.16 Kbytes 页数：10 Pages

IRF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：224.22 Kbytes 页数：10 Pages

IRF

GenarafionV Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：229.8 Kbytes 页数：10 Pages

IRF