丝印：IRF7307；Package：SOP-8；Generation V Technology Ultra

Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free 100 Features VDS (V) = 20V RDS(ON) 53m (VGS = 4.5V) RDS(ON) 70m (VGS = 2.7V) VDS (V) = -20V RDS(ON) m (VGS = -4.5V)
RDS(ON) 140m (VGS = -2.7V) N-

文件：491.51 Kbytes 页数：9 Pages

UMW

友台半导体

丝印：IRF7307；Package：SOP-8；MOSFET

Features N-Ch： VDS (V) = 20V RDS(ON)

文件：450.97 Kbytes 页数：9 Pages

EVVOSEMI

翊欧

丝印：IRF7307；Package：SOP-8；Generation V Technology Ultra

Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free 100 Features VDS (V) = 20V RDS(ON) 53m (VGS = 4.5V) RDS(ON) 70m (VGS = 2.7V) VDS (V) = -20V RDS(ON) m (VGS = -4.5V)
RDS(ON) 140m (VGS = -2.7V) N-

文件：491.51 Kbytes 页数：9 Pages

UMW

友台半导体

丝印：IRF7307；Package：SOP-8；Generation V Technology Ultra

Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free 100 Features VDS (V) = 20V RDS(ON) 53m (VGS = 4.5V) RDS(ON) 70m (VGS = 2.7V) VDS (V) = -20V RDS(ON) m (VGS = -4.5V)
RDS(ON) 140m (VGS = -2.7V) N-

文件：491.51 Kbytes 页数：9 Pages

UMW

友台半导体

丝印：IRF7307；Package：SOP-8；Generation V Technology Ultra

Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free 100 Features VDS (V) = 20V RDS(ON) 53m (VGS = 4.5V) RDS(ON) 70m (VGS = 2.7V) VDS (V) = -20V RDS(ON) m (VGS = -4.5V)
RDS(ON) 140m (VGS = -2.7V) N-

文件：491.51 Kbytes 页数：9 Pages

UMW

友台半导体

丝印：IRF7307；Package：SOP-8；MOSFET

Features N-Ch： VDS (V) = 20V RDS(ON)

文件：450.97 Kbytes 页数：9 Pages

EVVOSEMI

翊欧

丝印：F7101；Package：SO-8；Dual N and P Channel Mospet

文件：287.73 Kbytes 页数：10 Pages

Infineon

英飞凌

MOSFET

Features N-Ch： VDS (V) = 20V RDS(ON)

文件：450.97 Kbytes 页数：9 Pages

EVVOSEMI

翊欧

Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：194.12 Kbytes 页数：10 Pages

IRF

HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：282.08 Kbytes 页数：10 Pages

IRF