丝印：IRF7301；Package：SOP-8；Generation V Technology

Features VDS (V) = 20V RDS(ON)

文件：461.64 Kbytes 页数：7 Pages

UMW

友台半导体

丝印：IRF7301；Package：SOP-8；MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements,multiple devices can be used in an application with dramatically reduced board spa

文件：409.28 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

丝印：IRF7301；Package：SOP-8；Generation V Technology

Features VDS (V) = 20V RDS(ON)

文件：461.64 Kbytes 页数：7 Pages

UMW

友台半导体

丝印：IRF7301；Package：SOP-8；MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements,multiple devices can be used in an application with dramatically reduced board spa

文件：409.28 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

Power MOSFET(Vdss=20V, Rds(on)=0.050ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：113.75 Kbytes 页数：9 Pages

IRF

MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements,multiple devices can be used in an application with dramatically reduced board spa

文件：409.28 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：237.6 Kbytes 页数：9 Pages

IRF

Dual N-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：1.08868 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

GENERATION V TECHNOLOGY

文件：243.16 Kbytes 页数：9 Pages

IRF