IRF7104中文资料IRF数据手册PDF规格书
IRF7104规格书详情
描述 Description
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
● Adavanced Process Technology
● Ultra Low On-Resistance
● Dual P-Channel MOSFET
● Surface Mount
● Available in Tape & Reel
● Dynamic dv/dt Rating
● Fast Switching
产品属性
- 型号：
IRF7104
- 功能描述：
MOSFET DUAL -20V P-CH HEXFET 7.5mOhms 63nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
2022+ |
95 |
6600 |
只做原装,假一罚十,长期供货。 |
询价 | ||
IOR |
05+ |
原厂原装 |
14301 |
只做全新原装真实现货供应 |
询价 | ||
IR |
17+ |
SO8 |
6200 |
100%原装正品现货 |
询价 | ||
IOR |
25+23+ |
SOP8 |
34444 |
绝对原装正品全新进口深圳现货 |
询价 | ||
IR |
22+ |
SOP-8 |
12245 |
现货,原厂原装假一罚十! |
询价 | ||
Infineon/英飞凌 |
24+ |
SO-8_3.9mm |
25000 |
原装正品,假一赔十! |
询价 | ||
VISHAY |
24+ |
SOP-8 |
12000 |
VISHAY专营进口原装现货假一赔十 |
询价 | ||
IOR |
04+ |
SOP/8 |
267 |
原装现货海量库存欢迎咨询 |
询价 | ||
IR |
23+ |
SOP8 |
5000 |
原装正品,假一罚十 |
询价 | ||
IR |
25+ |
SOP-8 |
3200 |
全新原装、诚信经营、公司现货销售 |
询价 |
