IRF7102中文资料IRF数据手册PDF规格书

描述 Description

Fourth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve the lowest possible on-resistance per silicon

area. This benefit, combined with the fast switching speed and ruggedized device

design that HEXFET Power MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced

thermal characteristics and dual-die capability making it ideal in a variety of power

applications. With these improvements, multiple devices can be used in an

application with dramatically reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques. Power dissipation of greater

than 0.80W is possible in a typical PCB mount application.