EVALUATION KIT

INTRODUCING LX1710/1711 AUDIOMAX Thank you for your interest in the latest generation of AudioMAX products. The enclosed LXE1710 evaluation board is a fully functional mono amplifier designed to demonstrate the “new and improved” Switching Class-D Power Amplifier IC from Linfinity Microsemi. The

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Microsemi

美高森美

HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

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IRF

Dual N P Channel MOSFET

Features N-Ch: VDS (V)=25V RDS(ON)

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EVVOSEMI

翊欧

丝印：IRF7105；Package：SOP-8；Dual N P Channel MOSFET

Features N-Ch: VDS (V)=25V RDS(ON)

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EVVOSEMI

翊欧

25V 单个 N 通道和 P 通道 HEXFET Power MOSFET， 采用 SO-8 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 动态的dv/dt额定值\n• 快速开关\n• 双 N 通道和 P 通道 MOSFET;

Infineon

英飞凌

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

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IRF

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

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IRF

HEXFET Power MOSFET

DESCRIPTION These HEXFET®Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetiti

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IRF

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：307.9 Kbytes 页数：10 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：307.9 Kbytes 页数：10 Pages

IRF